PSMN7R6-60BS NXP Semiconductors, PSMN7R6-60BS Datasheet - Page 6

• Manufacturer Part Number: PSMN7R6-60BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN7R6-60BS
Product data sheet
Table 6.
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
D
(A)
I
D
100
100
80
60
40
20
80
60
40
20
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
Characteristics
8.0
15
10
Parameter
source-drain voltage
reverse recovery time
recovered charge
0.5
2
6.0
T
…continued
j
= 175 °C
1
V
GS
4
(V) = 4.5
1.5
Conditions
I
see
I
V
5.5
5.0
T
V
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S
S
j
DS
003aad665
003aad663
V
GS
= 25 °C
= 25 A; V
= 25 A; dI
DS
Figure 17
(V)
= 30 V
(V)
2
6
Rev. 2 — 2 March 2012
GS
S
/dt = 100 A/µs; V
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(pF)
(S)
g
C
4000
3000
2000
1000
160
120
fs
80
40
0
0
GS
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
0
= 0 V;
C
C
rss
iss
20
5
PSMN7R6-60BS
40
Min
-
-
-
10
60
Typ
0.86
40.4
56
15
© NXP B.V. 2012. All rights reserved.
80
V
003aad669
003aad664
GS
I
D
Max
1.2
-
-
(A)
(V)
100
20
ns
nC
Unit
V
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