PSMN3R8-100BS NXP Semiconductors, PSMN3R8-100BS Datasheet - Page 2

• Manufacturer Part Number: PSMN3R8-100BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN3R8-100BS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN3R8-100BS
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
It is not possible to make connection to pin 2.
Continuous current is limited by package.
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base;
connected to drain
D2PAK
Package
Name
[1]
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
Simplified outline
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK
≤ 100 V; R
SOT404 (D2PAK)
p
p
≤ 10 µs; T
≤ 10 µs; T
j
j
≤ 175 °C
≤ 175 °C; R
j
mb
j(init)
1
= 100 °C; see
GS
mb
2
= 25 °C; see
Figure 2
= 25 °C; I
= 50 Ω; Unclamped
3
mb
mb
= 25 °C; see
= 25 °C
GS
D
= 20 kΩ
Figure 1
= 120 A;
Figure 1
Graphic symbol
PSMN3R8-100BS
Figure 3
mbb076
G
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2012. All rights reserved.
D
S
Version
SOT404
Max
100
100
20
120
120
680
306
175
175
260
120
680
537
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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