PSMN3R8-100BS NXP Semiconductors, PSMN3R8-100BS Datasheet
PSMN3R8-100BS
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PSMN3R8-100BS Summary of contents
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... PSMN3R8-100BS N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK Rev. 2 — 29 February 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... T pulsed ° ° j(init) ≤ 100 Ω; Unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS Graphic symbol mbb076 Version SOT404 Min - = 20 kΩ -20 [1] Figure 1 - ...
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... N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK 003aag701 150 200 ( ° Fig All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature =10 μ ...
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... PSMN3R8-100BS Product data sheet N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board - All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS Min Typ Max - 0.22 0. 003aaf733 t ...
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... MHz °C; see Figure 0.67 Ω 4.7 Ω °C G(ext All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS Min Typ Max 100 - - 4 0.08 10 ...
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... 4 1 (V) DS Fig 8. Input and reverse transfer capacitances as a function of gate-source voltage, typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS Min Typ - 0 235 003aaf724 = 175 ° ° ...
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... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...
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... Q (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS GS(pl) V GS(th GS1 GS2 ...
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... N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS 003aaf731 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...
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... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN3R8-100BS v.2 20120229 • Modifications: Status changed from objective to product. • Various changes to content. PSMN3R8-100BS v.1 20110829 PSMN3R8-100BS Product data sheet N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK Data sheet status Change notice ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS © NXP B.V. 2012. All rights reserved ...
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... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN3R8-100BS © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 February 2012 Document identifier: PSMN3R8-100BS ...