PSMN2R5-30YL NXP Semiconductors, PSMN2R5-30YL Datasheet - Page 3
![Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/53/415320/sot669_3d_sml.gif)
PSMN2R5-30YL
Manufacturer Part Number
PSMN2R5-30YL
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R5-30YL.pdf
(14 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSMN2R5-30YL
Manufacturer:
NXP
Quantity:
72 000
Part Number:
PSMN2R5-30YL
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
PSMN2R5-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
10
10
10
120
100
(A)
10
I
-1
80
60
40
20
D
3
2
1
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
Limit R
DSon
100
= V
DS
/ I
D
150
T
All information provided in this document is subject to legal disclaimers.
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N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK
Fig 2.
DC
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
PSMN2R5-30YL
100
V
DS
(V)
100 μs
1 ms
10 ms
100 ms
10 μs
150
© NXP B.V. 2011. All rights reserved.
T
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