PSMN2R2-30YLC NXP Semiconductors, PSMN2R2-30YLC Datasheet - Page 9

Logic level enhancement mode N-channel MOSFET in LFPAK package

PSMN2R2-30YLC

Manufacturer Part Number
PSMN2R2-30YLC
Description
Logic level enhancement mode N-channel MOSFET in LFPAK package
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN2R2-30YLC
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
PSMN2R2-30YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
(mΩ)
R
DS on
12
10
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
20
Q
GS1
I
Q
D
GS
40
Q
GS2
2.6
Q
G(tot)
60
Q
GD
N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower
V
GS
80
All information provided in this document is subject to legal disclaimers.
003a a f 890
003aaa508
(V) =
I
D
(A)
2.8
3.0
3.5
4.5
10
100
Rev. 02 — 3 May 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
0
PSMN2R2-30YLC
20
60
V
GS
V
DS
=10V
15V
40
= 6V
120
24V
Q
© NXP B.V. 2011. All rights reserved.
G
003a a f 891
003a a f 897
T
(nC)
j
(°C)
4.5V
180
60
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