PSMN1R2-30YLC NXP Semiconductors, PSMN1R2-30YLC Datasheet - Page 8

• Manufacturer Part Number: PSMN1R2-30YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R2-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(S )
g
(A)
I
10
10
10
10
10
10
300
250
200
150
100
D
fs
50
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
25
Min
1
Typ
50
Max
2
75
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
V
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GS
003a a f 562
003a a f 561
I
D
(V)
(A)
100
3
Rev. 1 — 3 May 2011
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS (th)
(V)
(A)
I
100
D
80
60
40
20
3
2
1
0
0
-60
function of gate-source voltage
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
T
j
0
1
= 150 °C
PSMN1R2-30YLC
I
D
=5mA
60
2
1mA
T
j
= 25 °C
120
3
© NXP B.V. 2011. All rights reserved.
003a a f 560
003a a f 564
V
T
GS
j
( C)
(V)
180
4
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