PSMN1R2-25YL NXP Semiconductors, PSMN1R2-25YL Datasheet - Page 8

• Manufacturer Part Number: PSMN1R2-25YL
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R2-25YL_1
Product data sheet
Fig 11. Normalized drain-source on-state resistance
Fig 13. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
−60
factor as a function of junction temperature
charge; typical values
0
0
40
60
80
V
120
DS
Q
= 12V
G
003aad134
T
(nC)
j
( ° C)
03aa27
120
180
Rev. 01 — 25 June 2009
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
Fig 12. Gate charge waveform definitions
Fig 14. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN1R2-25YL
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aaa508
003aad135
(V)
C
C
C
oss
iss
rss
10
2
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