PSMN012-60YS NXP Semiconductors, PSMN012-60YS Datasheet - Page 9

• Manufacturer Part Number: PSMN012-60YS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN012-60YS_1
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(mΩ)
R
V
(V)
DSon
GS
50
40
30
20
10
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
4.5
25
8
12 V
V
DS
= 30 V
V
GS
50
16
(V) = 5
75
24
48 V
All information provided in this document is subject to legal disclaimers.
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I
G
D
(nC)
(A)
10
6
7
100
32
Rev. 01 — 5 January 2010
N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN012-60YS
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
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(V)
C
C
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