PSMN011-30YL NXP Semiconductors, PSMN011-30YL Datasheet - Page 6

• Manufacturer Part Number: PSMN011-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN011-30YL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(S)
g
I
D
50
fs
40
30
20
10
50
40
30
20
10
0
0
function of drain-source voltage; typical values
drain current; typical values
T
Output characteristics: drain current as a
T
Forward transconductance as a function of
0
0
j
j
Characteristics
= 25°C and t
= 25°C; V
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
10
0.5
4.5
DS
p
= 10 V
20
= 300 us
…continued
1
30
1.5
V
GS
40
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003aaf435
V
(V) = 2.4
003aaf437
DS
I
D
3.5
(V)
(A)
2.6
3.2
2.8
3.0
50
Conditions
I
see
I
V
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
2
S
S
GS
Rev. 2 — 17 May 2011
= 15 A; V
= 15 A; dI
Figure 17
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 15 V
(pF)
(A)
1500
1000
I
C
D
500
40
30
20
10
0
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
V
Transfer characteristics: drain current as a
V
Input and reverse transfer capacitances as a
j
0
0
= 25 °C;
DS
DS
= 10 V
= 0 V; f = 1 MHz
2.5
1
T
j
= 150 °C
PSMN011-30YL
Min
-
-
-
2
5
T
Typ
0.9
36
30
j
= 25 °C
7.5
3
© NXP B.V. 2011. All rights reserved.
V
V
003aaf436
003aaf438
GS
GS
Max
1.2
-
-
(V)
C
C
(V)
iss
rss
10
4
Unit
V
ns
nC
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