PMV45EN NXP Semiconductors, PMV45EN Datasheet - Page 6

• Manufacturer Part Number: PMV45EN
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMV45EN
Product data sheet
Fig 5.
Fig 7.
(A)
10
I
10
10
10
10
10
(A)
I D
D
-1
-2
-3
-4
-5
-6
3
2
1
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10 V 4.5 V
0.1
1
min
0.2
3.1 V
2.9 V
typ
0.3
2
max
V GS = 2.2 V
V
0.4
All information provided in this document is subject to legal disclaimers.
GS
03aa36
V DS (V)
(V)
2.6 V
2.4 V
03al03
Rev. 2 — 7 November 2011
0.5
3
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I D
2.5
1.5
0.5
3
2
1
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V DS > I D x R DSon
N-channel TrenchMOS logic level FET
0
1
25 ° C
60
max
typ
min
2
PMV45EN
120
© NXP B.V. 2011. All rights reserved.
T j = 150 ° C
V GS (V)
T
03aa33
j
( ° C)
03ak72
180
3
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