PMV30XN NXP Semiconductors, PMV30XN Datasheet - Page 8
![N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415233/sot023_3d_sml.gif)
PMV30XN
Manufacturer Part Number
PMV30XN
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMV30XN.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMV30XN
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
PMV30XN
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= 3 A; V
= 0 V
j
j
= 150 °C
= 25 °C
1
DS
= 10 V; T
2
amb
3
= 25 °C
(A)
I
S
2.5
2.0
1.5
1.0
0.5
0.0
0.0
All information provided in this document is subject to legal disclaimers.
4
017aaa271
Q
G
(nC)
5
0.2
Rev. 1 — 22 June 2011
0.4
Fig 15. Gate charge waveform definitions
(1)
0.6
V
V
V
V
V
GS(pl)
017aaa272
DS
GS(th)
GS
SD
(2)
(V)
20 V, 3.2 A N-channel Trench MOSFET
0.8
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
PMV30XN
© NXP B.V. 2011. All rights reserved.
017aaa137
8 of 15