PMV30XN NXP Semiconductors, PMV30XN Datasheet - Page 6

• Manufacturer Part Number: PMV30XN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMV30XN
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DSon
(A)
I
D
140
120
100
14
12
10
80
60
40
20
8
6
4
2
0
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
2
j
j
= 25 °C
= 25 °C
(1)
GS
GS
GS
GS
GS
GS
= 1.8 V
= 2.0 V
= 2.25 V
= 2.5 V
= 3.0 V
= 4.5 V
4.5 V
3 V
2.5 V
(2)
1
6
2
V
(3)
(4)
(5)
(6)
GS
10
1.8 V
= 2.25 V
2 V
3
I
All information provided in this document is subject to legal disclaimers.
D
V
017aaa264
017aaa265
DS
(A)
(V)
14
4
Rev. 1 — 22 June 2011
Fig 7.
Fig 9.
(A)
I
10
10
10
10
D
R
(mΩ)
–3
–4
–5
–6
DSon
0.0
gate-source voltage
100
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
D
80
60
40
20
j
0
= 25 °C; V
= 5 A
0
j
j
= 150 °C
= 25 °C
(1)
20 V, 3.2 A N-channel Trench MOSFET
0.5
DS
2
(2)
= 5 V
1.0
4
(3)
PMV30XN
1.5
© NXP B.V. 2011. All rights reserved.
V
017aaa180
6
GS
(1)
(2)
V
017aaa266
(V)
GS
2.0
(V)
8
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