PMR290UNE NXP Semiconductors, PMR290UNE Datasheet - Page 6
![N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415248/sot416_3d_sml.gif)
PMR290UNE
Manufacturer Part Number
PMR290UNE
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMR290UNE.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMR290UNE
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
PMR290UNE,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
7. Characteristics
Table 7.
PMR290UNE
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
g
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
forward
Conditions
I
I
V
V
V
V
V
V
V
V
V
V
V
V
T
V
T
V
R
I
All information provided in this document is subject to legal disclaimers.
D
D
S
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
= 25 °C
= 25 °C
= 300 mA; V
= 250 µA; V
= 250 µA; V
= 20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; f = 1 MHz; V
= 10 V; R
= 8 V; V
= -8 V; V
= 4.5 V; V
= -4.5 V; V
= 4.5 V; I
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
Rev. 1 — 13 September 2011
= 6 Ω; T
DS
D
D
DS
D
D
D
D
GS
GS
L
GS
DS
DS
= 200 mA; T
= 500 mA; V
GS
j
DS
= 500 mA; T
= 500 mA; T
= 400 mA; T
= 100 mA; T
= 250 Ω; V
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
; T
j
j
= 25 °C
j
j
GS
= 25 °C
j
j
= 25 °C
= 150 °C
j
j
j
GS
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
j
GS
j
j
j
j
= 0 V;
= 25 °C
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= 4.5 V;
= 4.5 V;
20 V, 700 mA N-channel Trench MOSFET
Min
20
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.48
PMR290UNE
Typ
-
0.75
-
-
-
-
-
-
290
460
420
600
1.6
0.45
0.15
0.15
55
15
7
6
4
86
31
0.77
© NXP B.V. 2011. All rights reserved.
-
Max
-
0.95
1
10
2
2
500
500
380
610
620
1100
-
0.68
-
83
-
-
12
-
172
-
1.2
Unit
V
V
µA
µA
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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