PMR290UNE NXP Semiconductors, PMR290UNE Datasheet
PMR290UNE
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PMR290UNE Summary of contents
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... PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Rev. 1 — 13 September 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology 1.3 Applications ...
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... Simplified outline SOT416 (SC-75) Description plastic surface-mounted package; 3 leads Marking code AC All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Graphic symbol 017aaa255 Version SOT416 © NXP B.V. 2011. All rights reserved ...
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... ° °C amb HBM 017aaa123 75 125 175 T (°C) j Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Min - -8 [ °C - [1] = 100 °C - ≤ 10 µ [ ...
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... Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMR290UNE Product data sheet = V /I DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET 017aaa350 (1) (2) (3) (4) ( (V) DS © NXP B.V. 2011. All rights reserved. ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMR290UNE Product data sheet Conditions in free air − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Min Typ Max [1] - 440 510 [2] - 360 415 - ...
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... 4 Ω °C G(ext 300 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Min Typ Max 0.5 0.75 0. ...
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... GS 1.4 V 1 (V) DS Fig 7. 017aaa353 (3) (4) (5) (6) 0.5 0.6 0.7 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET – (A) –4 10 (1) (2) –5 10 –6 10 0.00 0.25 0.50 0. ° (1) minimum values ...
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... GS Fig 11. Normalized drain-source on-state resistance as 017aaa357 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET 1.75 a 1.50 1.25 1.00 0.75 0.50 – function of junction temperature; typical ...
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... °C amb Fig 15. Gate charge waveform definitions 0 (A) 0.6 0.5 0.4 (1) 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa137 017aaa360 (2) 0 ...
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... PMR290UNE Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... 0.5 scale 1.8 0.9 1.75 1 0.5 1.4 0.7 1.45 REFERENCES JEDEC JEITA SC-75 All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION SOT416 X c ...
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... Product data sheet 2.2 1.7 1 0.5 (3×) 0.6 (3×) 1.3 All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET solder lands solder resist 2 solder paste occupied area Dimensions in mm sot416_fr © NXP B.V. 2011. All rights reserved ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMR290UNE v.1 20110913 PMR290UNE Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 September 2011 Document identifier: PMR290UNE ...