PMN35EN NXP Semiconductors, PMN35EN Datasheet - Page 8

• Manufacturer Part Number: PMN35EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN35EN
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= 5.1 A; V
= 0 V
j
j
= 150 °C
= 25 °C
2
DS
= 15 V; T
4
amb
(A)
I
S
= 25 °C
6
4
2
0
6
0.0
All information provided in this document is subject to legal disclaimers.
Q
017aaa288
G
(nC)
0.2
8
Rev. 1 — 20 July 2011
0.4
Fig 15. Gate charge waveform definitions
0.6
(1)
0.8
V
V
V
V
GS(pl)
017aaa289
DS
GS(th)
GS
V
SD
(2)
(V)
30 V, 5.1 A N-channel Trench MOSFET
1.0
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
PMN35EN
© NXP B.V. 2011. All rights reserved.
017aaa137
8 of 15