PMN35EN NXP Semiconductors, PMN35EN Datasheet - Page 2

• Manufacturer Part Number: PMN35EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
PMN35EN
Product data sheet
Type number
PMN35EN
Type number
PMN35EN
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
j
amb
stg
DS
GS
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
TSOP6
Package
Name
Description
plastic surface-mounted package (TSOP6); 6 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
j
amb
amb
sp
amb
GS
GS
Rev. 1 — 20 July 2011
= 25 °C
= 25 °C
= 10 V; T
= 10 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Marking code
SH
amb
amb
= 25 °C
= 100 °C
p
30 V, 5.1 A N-channel Trench MOSFET
≤ 10 µs
[1]
[1]
[2]
[1]
[1]
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
-
PMN35EN
© NXP B.V. 2011. All rights reserved.
2
SOT457
150
150
150
Version
Max
30
20
5.1
3.2
24
500
1250
4170
1.3
.
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
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