PMN34UN NXP Semiconductors, PMN34UN Datasheet - Page 6

• Manufacturer Part Number: PMN34UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10979
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
I D
j
j
20
15
10
= 25 C
80
60
40
20
= 25 C
5
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
0.2
5
V GS = 1.8 V
0.4
10
0.6
2 V
15
V GS = 1.4 V
0.8
4.5 V
I D (A)
V DS (V)
03al45
03al46
2.5 V
4.5 V
3 V
2.5 V
1.8 V
1.6 V
2 V
3 V
Rev. 01 — 26 February 2003
20
1
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
a
j
I D
1.5
0.5
= 25 C and 150 C; V
=
5
4
3
2
1
0
2
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
-60
0
DSon 25 C
V DS > I D x R DSon
R
DSon
0.5
0
T j = 150 C
TrenchMOS™ ultra low level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
DS
60
1
> I
D
x R
DSon
PMN34UN
25 C
120
1.5
V GS (V)
T j ( C)
03al47
03af18
180
2
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