PMN34UN NXP Semiconductors, PMN34UN Datasheet - Page 5

• Manufacturer Part Number: PMN34UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 10979
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
V
V
V
V
D
D
S
Rev. 01 — 26 February 2003
DS
GS
GS
GS
GS
DD
GS
DD
T
T
= 1.7 A; V
= 250 A; V
= 1 mA; V
j
j
= 24 V; V
= 8 V; V
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 15 V; V
= 0 V; V
= 15 V; R
= 25 C
= 55 C
GS
DS
DS
D
D
D
GS
DS
GS
D
GS
= V
= 2 A;
= 2 A;
= 1.5 A;
= 25 V; f = 1 MHz;
= 0 V;
= 12 ; V
= 0 V
= 0 V
= 4.5 V; I
= 0 V
GS
;
Figure 12
Figure 7
Figure 7
Figure 9
Figure 7
GS
D
= 5 A;
= 4.5 V; R
and
and
and
Figure 13
Figure 11
8
8
TrenchMOS™ ultra low level FET
8
G
= 6
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
30
0.45
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMN34UN
Typ
-
0.7
0.01
-
10
38
45
54
9.9
1.4
2.1
790
90
50
10
12
50
10
0.73
Max
-
-
1.0
10
100
46
54
77
-
-
-
-
-
-
-
-
-
-
1.2
5 of 12
Unit
V
V
nA
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
A
A