PMN34LN NXP Semiconductors, PMN34LN Datasheet - Page 8

• Manufacturer Part Number: PMN34LN
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10938
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
10
= 25 C and 150 C; V
8
6
4
2
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
150 C
GS
0.6
= 0 V
T j = 25 C
0.9
V SD (V)
03al64
1.2
Rev. 01 — 21 March 2003
Fig 13. Gate-source voltage as a function of gate
I
V GS
D
(V)
10
= 6 A; V
8
6
4
2
0
charge; typical values.
0
I D = 6 A
T j = 25 C
V DD = 10 V
DD
= 10 V
5
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
10
PMN34LN
Q G (nC)
03al66
15
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