PMN34LN NXP Semiconductors, PMN34LN Datasheet - Page 7
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PMN34LN
Manufacturer Part Number
PMN34LN
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMN34LN.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PMN34LN
Manufacturer:
NXP
Quantity:
82 000
Part Number:
PMN34LN
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
9397 750 10938
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
2.5
1.5
0.5
= 1 mA; V
2
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
= V
0
GS
60
max
typ
min
(pF)
C
10 3
10 2
120
10 -1
T j ( C)
03aa33
180
Rev. 01 — 21 March 2003
1
Fig 10. Sub-threshold drain current as a function of
10
T
(A)
I D
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
= 25 C
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03al65
10 2
1
min
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
typ
2
max
PMN34LN
V GS (V)
03aa36
3
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