PMN27UN NXP Semiconductors, PMN27UN Datasheet - Page 6

• Manufacturer Part Number: PMN27UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10189
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
I D
j
j
= 25 C
60
40
20
= 25 C
20
15
10
0
5
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
0.2
5
1.6 V
0.4
V GS = 1.8 V
4.5 V
10
0.6
2.5 V
15
V GS = 1.2 V
0.8
I D (A)
V DS (V)
2 V
03aj58
03aj59
2.5 V
4.5 V
1.8 V
1.6 V
1.4 V
2 V
Rev. 01 — 27 September 2002
20
1
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
I D
a
j
1.5
0.5
= 25 C and 150 C; V
=
20
15
10
2
1
0
5
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
-60
0
DSon 25 C
R
V DS > I D x R DSon
DSon
T j = 150 C
0
TrenchMOS™ ultra low level FET
1
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
25 C
60
> I
D
x R
2
DSon
PMN27UN
120
V GS (V)
T j ( C)
03aj60
03af18
180
3
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