PMN27UN NXP Semiconductors, PMN27UN Datasheet
PMN27UN
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PMN27UN Summary of contents
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... TrenchMOS™ ultra low level FET Rev. 01 — 27 September 2002 M3D302 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN27UN in SOT457 (TSOP6). 2. Features TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package. 3. Applications ...
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... 4.5 V; Figure 2 and 4.5 V; Figure pulsed Figure Figure Rev. 01 — 27 September 2002 PMN27UN TrenchMOS™ ultra low level FET Typ Max Unit - 5 1. 150 ...
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... ------------------ - der Fig 2. Normalized continuous drain current as a function of solder point temperature Rev. 01 — 27 September 2002 PMN27UN TrenchMOS™ ultra low level FET 03aa25 150 50 100 200 100% 03aj57 100 ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 10189 Product data Conditions Rev. 01 — 27 September 2002 PMN27UN TrenchMOS™ ultra low level FET Min Typ Max Unit Figure K/W 03aj56 ...
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... 4 3 MHz; Figure 4 1 Figure Rev. 01 — 27 September 2002 PMN27UN TrenchMOS™ ultra low level FET Min Typ Max Unit 0.4 0 0.01 1 100 ...
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... --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 27 September 2002 PMN27UN TrenchMOS™ ultra low level FET 03aj60 150 (V) > DSon 03af18 0 60 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 01 — 27 September 2002 PMN27UN TrenchMOS™ ultra low level FET 03aj64 min typ 0 0.2 0.4 0 03aj62 C iss C oss C rss 10 2 © ...
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... Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 27 September 2002 PMN27UN TrenchMOS™ ultra low level FET 03aj63 3 (nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... 3.1 1.7 3.0 0.6 0.33 0.95 2.7 1.3 2.5 0.2 0.23 REFERENCES JEDEC EIAJ SC-74 Rev. 01 — 27 September 2002 PMN27UN TrenchMOS™ ultra low level FET detail 0.2 0.2 0.1 EUROPEAN ISSUE DATE PROJECTION 97-02-28 01-05-04 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. SOT457 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020927 - Product data (9397 750 10189) 9397 750 10189 Product data Rev. 01 — 27 September 2002 PMN27UN TrenchMOS™ ultra low level FET © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... Rev. 01 — 27 September 2002 Rev. 01 — 27 September 2002 PMN27UN PMN27UN TrenchMOS™ ultra low level FET TrenchMOS™ ultra low level FET performance. Philips Semiconductors ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 September 2002 Document order number: 9397 750 10189 PMN27UN TrenchMOS™ ultra low level FET ...