PMF3800SN NXP Semiconductors, PMF3800SN Datasheet - Page 3

• Manufacturer Part Number: PMF3800SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMF3800SN_3
Product data sheet
Symbol
Source-drain diode
I
I
Electrostatic discharche voltage
V
S
SM
Fig 1.
Fig 3.
ESD
(%)
I
(A)
der
I
10
10
10
D
120
80
40
−1
−2
−3
0
1
function of solder point temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
Limiting values
Parameter
source current
peak source current
electrostatic discharge
voltage
Limit R
DSon
50
= V
DS
…continued
/ I
100
D
Conditions
T
T
HBM; C = 100 pF; R = 1.5 kΩ
sp
sp
150
= 25 °C
= 25 °C; t
T
sp
03aa25
(°C)
Rev. 03 — 11 November 2009
200
p
≤ 10 µs; pulsed
10
Fig 2.
DC
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
50
V
DS
(V)
100
PMF3800SN
Min
-
-
-
150
t
100 μs
1 ms
10 ms
100 ms
p
© NXP B.V. 2009. All rights reserved.
= 10 μs
T
sp
Max
280
560
1
03aa17
(°C)
03ap26
200
10
2
Unit
mA
mA
kV
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