PMF3800SN NXP Semiconductors, PMF3800SN Datasheet
PMF3800SN
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PMF3800SN Summary of contents
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... PMF3800SN N-channel TrenchMOS standard level FET Rev. 03 — 11 November 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... ° see Figure ≤ 10 µs; pulsed; see °C; t Figure °C; see Figure 2 sp Rev. 03 — 11 November 2009 PMF3800SN N-channel TrenchMOS standard level FET Graphic symbol Version SOT323 [1] Min Max - - 165 ...
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... HBM 100 pF 1.5 kΩ 03aa25 120 P der (%) 150 200 0 T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature DC 10 Rev. 03 — 11 November 2009 PMF3800SN N-channel TrenchMOS standard level FET Min Max - 280 - 560 - 1 03aa17 50 100 150 T (°C) sp 03ap26 = 10 μ 100 μ ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMF3800SN_3 Product data sheet Conditions see Figure 4 −2 − Rev. 03 — 11 November 2009 PMF3800SN N-channel TrenchMOS standard level FET Min Typ Max - - 220 03ap25 δ ...
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... ° 300 mA °C; see Figure 300 mA; dI /dt = -100 A/µ ° Rev. 03 — 11 November 2009 PMF3800SN N-channel TrenchMOS standard level FET Min Typ Max ...
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... I D (A) −2 10 −3 10 −4 10 −5 10 −6 10 120 180 0 T (°C) j Fig 8. Sub-threshold drain current as a function of gate-source voltage Rev. 03 — 11 November 2009 PMF3800SN 03an72 × R > DSon 150 ° ° (V) GS 03aa37 min typ 0.6 1.2 1.8 2.4 V (V) GS © ...
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... C (pF −1 0.9 1 (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 03 — 11 November 2009 PMF3800SN 03aa28 0 60 120 180 T (°C) j 03aa46 C iss C oss C rss ...
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... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PMF3800SN_3 Product data sheet 0 (A) 0.4 0.3 0.2 150 ° 0.3 0.6 0.9 Rev. 03 — 11 November 2009 PMF3800SN N-channel TrenchMOS standard level FET 03an73 = 25 °C j 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... scale 2.2 1.35 2.2 0.45 1.3 0.65 1.8 1.15 2.0 0.15 REFERENCES JEDEC JEITA SC-70 Rev. 03 — 11 November 2009 PMF3800SN detail 0.23 0.2 0.2 0.13 EUROPEAN ISSUE DATE PROJECTION 04-11-04 06-03-16 © NXP B.V. 2009. All rights reserved. SOT323 ...
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... Legal texts have been adapted to the new company name where appropriate. • Maximum value added for V PMF3800SN_2 (9397 750 20050701 15218) PMF3800SN_1 (9397 750 20050208 14255) PMF3800SN_3 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 11 November 2009 PMF3800SN N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 November 2009 Document identifier: PMF3800SN_3 All rights reserved. ...