PHP191NQ06LT NXP Semiconductors, PHP191NQ06LT Datasheet - Page 4

• Manufacturer Part Number: PHP191NQ06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHP191NQ06LT_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Z
(K/W)
th(j-mb)
10
10
−1
−2
1
10
−4
δ = 0.5
0.2
0.1
0.05
0.02
single pulse
10
All information provided in this document is subject to legal disclaimers.
−3
Conditions
see
vertical in still air
Rev. 02 — 14 January 2010
Figure 4
10
−2
10
N-channel TrenchMOS logic level FET
−1
P
t
p
PHP191NQ06LT
t
p
T
(s)
Min
-
-
δ =
03ar00
T
t
t
p
1
Typ
-
60
© NXP B.V. 2010. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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