PHP191NQ06LT NXP Semiconductors, PHP191NQ06LT Datasheet
PHP191NQ06LT
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PHP191NQ06LT Summary of contents
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... PHP191NQ06LT N-channel TrenchMOS logic level FET Rev. 02 — 14 January 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... ° j(init Ω; t ≤ 0.21 ms unclamped All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET Graphic symbol mbb076 3 Version SOT78 Min Max - ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET 03aa16 50 100 150 200 T (°C) mb 03ar01 = 10 μ 100 μs ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PHP191NQ06LT_2 Product data sheet Conditions see Figure 4 vertical in still air −3 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET Min Typ Max - - 0 03ar00 t ...
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... ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET Min Typ Max 2 ...
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... Fig 8. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET 03ar04 > DSon = 175 °C 25 ° ...
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... Q (nC) G Fig 12. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET 03ar03 = 25 ° 3 3 160 ...
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... PHP191NQ06LT_2 Product data sheet ( 175 ° ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET 03ar05 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHP191NQ06LT separated from data sheet PHP_PHB191NQ06LT-01. PHP_PHB191NQ06LT-01 20040505 (9397 750 13168) PHP191NQ06LT_2 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 January 2010 PHP191NQ06LT N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PHP191NQ06LT_2 All rights reserved. Date of release: 14 January 2010 ...