PHKD6N02LT NXP Semiconductors, PHKD6N02LT Datasheet - Page 8
PHKD6N02LT
Manufacturer Part Number
PHKD6N02LT
Description
Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PHKD6N02LT.pdf
(13 pages)
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NXP Semiconductors
PHKD6N02LT
Product data sheet
Fig 13. Source current as a function of source-drain voltage; typical values
(A)
I
S
5
4
3
2
1
0
0.2
All information provided in this document is subject to legal disclaimers.
0.4
Rev. 04 — 27 April 2010
150 °C
0.6
T
j
= 25 °C
0.8
Dual N-channel TrenchMOS logic level FET
V
003aaa306
SD
(V)
1
PHKD6N02LT
© NXP B.V. 2010. All rights reserved.
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