PHD9NQ20T NXP Semiconductors, PHD9NQ20T Datasheet - Page 6

• Manufacturer Part Number: PHD9NQ20T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHD9NQ20T
Product data sheet
Fig 6.
Fig 8.
Fig 10. Normalized drain-source on-state resistance
(A)
(A)
I
l
a
D
D
2.9
2.1
1.3
0.5
10
10
8
6
4
2
0
8
6
4
2
0
−60
function of drain-source voltage; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Output characteristics: drain current as a
V
Transfer characteristics: drain current as a
0
0
j
DS
= 25 °C
> I
D
0.4
x R
DSon
20
2
0.8
V
GS
(V) = 10
T
j
= 175 °C
1.2
100
8
4
V
1.6
T
T
All information provided in this document is subject to legal disclaimers.
GS
j
j
003aae678
003aae680
003aae682
= 25 °C
(°C)
5.5
4.5
V
6
5
DS
(V)
(V)
Rev. 03 — 16 December 2010
180
2
6
Fig 7.
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
R
V
DS(on)
GS(th)
(Ω)
(S)
(V)
g
fs
0.5
0.4
0.3
0.2
0.1
12
8
4
0
5
4
3
2
1
0
−60
0
of drain current; typical values
drain current; typical values
junction temperature
T
Drain-source on-state resistance as a function
V
Forward transconductance as a function of
I
0
D
j
DS
N-channel TrenchMOS standard level FET
= 25 °C
= 1 mA; V
4.5
> I
D
2
2
x R
DSon
DS
5
20
= V
4
4
maximum
GS
minimum
typical
T
T
j
j
PHD9NQ20T
= 175 °C
= 25 °C
6
6
100
8
5.5
V
GS
© NXP B.V. 2010. All rights reserved.
T
8
8
j
003aae679
003aae681
003aae683
(°C)
(V) = 10
6
I
I
D
D
(A)
(A)
180
10
10
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