PHD9NQ20T NXP Semiconductors, PHD9NQ20T Datasheet - Page 5

• Manufacturer Part Number: PHD9NQ20T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
PHD9NQ20T
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
g
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
transfer conductance
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
I
I
V
V
V
V
V
V
I
T
V
T
V
R
V
from tab to centre of die ; T
From source lead to source bond pad ;
T
I
I
V
D
D
D
D
D
D
S
S
Rev. 03 — 16 December 2010
j
j
j
DS
DS
GS
GS
GS
GS
DS
DS
G(ext)
DS
GS
= 25 °C
= 25 °C
= 25 °C
= 9 A; V
= 9 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 9 A; V
= 200 V; V
= 200 V; V
= 25 V; V
= 100 V; R
= 25 V; I
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= -10 V; V
= 5.6 Ω; T
GS
DS
S
/dt = -100 A/µs;
DS
DS
DS
D
D
D
= 160 V; V
= 0 V; T
GS
DS
DS
DS
= 4.5 A; T
= 4.5 A; T
= 4.5 A; T
GS
GS
L
= V
= V
= V
GS
GS
= 10 Ω; V
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 25 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
= 25 °C
j
j
j
GS
j
j
j
j
= 175 °C
= 25 °C
= -55 °C
j
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
GS
= 25 °C
j
j
j
= 175 °C
= 25 °C
j
= 10 V;
N-channel TrenchMOS standard level FET
= 25 °C
= -55 °C
= 25 °C
= 25 °C
= 10 V;
Min
200
178
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.8
-
-
-
-
-
PHD9NQ20T
Typ
-
-
-
3
-
-
0.05
10
10
-
300
24
4
12
959
93
54
8
19
25
15
6
3.5
7.5
0.85
92
0.5
© NXP B.V. 2010. All rights reserved.
-
Max
-
-
-
4
6
500
10
100
100
1.16
400
-
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
Ω
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
nH
nH
V
ns
µC
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