PHD20N06T NXP Semiconductors, PHD20N06T Datasheet - Page 7

• Manufacturer Part Number: PHD20N06T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHD20N06T_2
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
180
160
140
120
100
80
60
40
25
20
15
10
5
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
V
GS
5.5
(V) =
10
2
T
6
j
= 175 °C
6.5 7
20
4
T
j
8
= 25 °C
30
6
V
40
8
GS
003aaa046
10
003aaa049
I
D
(V)
(A)
Rev. 02 — 1 December 2009
10
50
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.8
1.2
0.6
5
4
3
2
1
0
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
60
60
max
min
typ
PHD20N06T
120
120
© NXP B.V. 2009. All rights reserved.
T
T
j
j
(°C)
(°C)
03aa32
03aa28
180
180
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