PHB33NQ20T NXP Semiconductors, PHB33NQ20T Datasheet - Page 4

• Manufacturer Part Number: PHB33NQ20T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHB33NQ20T_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-a)
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-5
Thermal characteristics
δ = 0.5
0.2
0.1
0.05
0.02
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting
base
single pulse
10
-4
Conditions
mounted on a printed circuit board;
minimum footprint; vertical in still air
see
Figure 4
Rev. 02 — 3 February 2009
10
-3
10
-2
N-channel TrenchMOS standard level FET
Min
-
-
10
PHB33NQ20T
-1
P
Typ
50
-
t
p
t
p
T
(s)
© NXP B.V. 2009. All rights reserved.
03ao09
δ =
Max
-
0.65
T
t
p
t
1
Unit
K/W
K/W
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