PHB33NQ20T NXP Semiconductors, PHB33NQ20T Datasheet
PHB33NQ20T
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PHB33NQ20T Summary of contents
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... PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... ° ° 10 j(init Ω unclamped 0.14 ms Rev. 02 — 3 February 2009 PHB33NQ20T N-channel TrenchMOS standard level FET Graphic symbol mbb076 Version SOT404 Min Max - 200 - 200 -20 ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature / Rev. 02 — 3 February 2009 PHB33NQ20T N-channel TrenchMOS standard level FET 03aa16 50 100 150 T (°C) mb 03ao10 = 10 μ 100 μ (V) DS © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PHB33NQ20T_2 Product data sheet Conditions mounted on a printed circuit board; minimum footprint; vertical in still air see Figure Rev. 02 — 3 February 2009 PHB33NQ20T N-channel TrenchMOS standard level FET Min Typ Max - 0.65 03ao09 t P δ ...
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... G(ext ° see Figure /dt = -100 A/µ ° Rev. 02 — 3 February 2009 PHB33NQ20T N-channel TrenchMOS standard level FET Min Typ Max 180 - - 200 - - 4 500 - - ...
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... T (°C) j Fig 8. Sub-threshold drain current as a function of gate-source voltage Rev. 02 — 3 February 2009 PHB33NQ20T N-channel TrenchMOS standard level FET 03ao13 V > DSon 175 ° ° (V) GS 03aa35 min ...
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... C (pF) 100 160 (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 3 February 2009 PHB33NQ20T 03al52 0 60 120 180 T (°C) j 03ao15 C iss C oss C rss (V) DS © ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PHB33NQ20T_2 Product data sheet ( 175 ° ° 0.3 0.6 0.9 Rev. 02 — 3 February 2009 PHB33NQ20T N-channel TrenchMOS standard level FET 03ao14 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 3 February 2009 PHB33NQ20T N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...
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... Legal texts have been adapted to the new company name where appropriate. PHP_PHB33NQ20T_1 20041108 (9397 750 14003) PHB33NQ20T_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 3 February 2009 PHB33NQ20T Supersedes PHP_PHB33NQ20T_1 - © NXP B.V. 2009. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 3 February 2009 PHB33NQ20T N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PHB33NQ20T_2 All rights reserved. Date of release: 3 February 2009 ...