PHB110NQ08T NXP Semiconductors, PHB110NQ08T Datasheet - Page 6

• Manufacturer Part Number: PHB110NQ08T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB110NQ08T_2
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
D
10
10
10
10
10
10
240
160
D
80
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
T
j
= 25 °C
1
2
min
10 V
2
7 V
typ
4
V
3
max
GS
V
GS
V
DS
= 4.5 V
(V)
5.5 V
03ap77
03aa35
(V)
6 V
5 V
Rev. 02 — 12 October 2009
4
6
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
D
75
50
25
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
N-channel TrenchMOS standard level FET
V
DS
> I
D
0
x R
DSon
2
T
PHB110NQ08T
j
= 175 °C
60
max
min
typ
4
120
V
© NXP B.V. 2009. All rights reserved.
25 °C
GS
T
j
(V)
(°C)
03ap79
03aa32
180
6
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