PHB110NQ08T NXP Semiconductors, PHB110NQ08T Datasheet
PHB110NQ08T
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PHB110NQ08T Summary of contents
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... PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... ° ° j(init Ω unclamped 0.15 ms Rev. 02 — 12 October 2009 PHB110NQ08T N-channel TrenchMOS standard level FET Graphic symbol mbb076 Version SOT404 Min Max - -20 20 ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = V /I DSon D.C. δ Rev. 02 — 12 October 2009 PHB110NQ08T N-channel TrenchMOS standard level FET 03aa16 0 50 100 150 T (°C) mb 03nb44 100 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PHB110NQ08T_2 Product data sheet Conditions see Figure 4 mounted on printed-circuit board; minimum footprint; vertical in still air single pulse −3 − Rev. 02 — 12 October 2009 PHB110NQ08T N-channel TrenchMOS standard level FET Min Typ Max - - 0. 03ap75 t p δ ...
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... °C G(ext ° see Figure /dt = -100 A/µ ° Rev. 02 — 12 October 2009 PHB110NQ08T N-channel TrenchMOS standard level FET Min Typ Max 4 500 - ...
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... V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 12 October 2009 PHB110NQ08T N-channel TrenchMOS standard level FET 03ap79 V > DSon 25 °C = 175 ° (V) GS 03aa32 max typ min ...
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... 120 Q (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 12 October 2009 PHB110NQ08T N-channel TrenchMOS standard level FET 03nb25 0 60 120 T (°C) j 03ap81 C iss C oss C rss − ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PHB110NQ08T_2 Product data sheet ( 175 ° ° 0.3 0.6 0.9 Rev. 02 — 12 October 2009 PHB110NQ08T N-channel TrenchMOS standard level FET 03ap80 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 12 October 2009 PHB110NQ08T N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Typenumber PHB110NQ08T separated from data sheet PHP_PHB110NQ08T-01. PHP_PHB110NQ08T-01 20040329 (9397 750 12927) PHB110NQ08T_2 ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 12 October 2009 PHB110NQ08T N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PHB110NQ08T_2 All rights reserved. Date of release: 12 October 2009 ...