BSS84AKM NXP Semiconductors, BSS84AKM Datasheet - Page 11
![P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415244/sot883_3d_sml.gif)
BSS84AKM
Manufacturer Part Number
BSS84AKM
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSS84AKM.pdf
(16 pages)
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NXP Semiconductors
9. Package outline
Fig 18. Package outline SOT883 (SOT883)
BSS84AKM
Product data sheet
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
UNIT
mm
VERSION
OUTLINE
SOT883
A
0.50
0.46
(1)
max.
0.03
e
A
1
b
0.20
0.12
2
1
b
IEC
0.55
0.47
b
1
L
0.62
0.55
D
1.02
0.95
E
All information provided in this document is subject to legal disclaimers.
JEDEC
e 1
E
0.35
e
REFERENCES
Rev. 1 — 23 May 2011
0.65
e
1
L 1
0.30
0.22
SC-101
L
JEITA
3
0.30
0.22
L
A 1
D
1
b 1
A
0
50 V, 230 mA P-channel Trench MOSFET
PROJECTION
EUROPEAN
scale
0.5
BSS84AKM
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
03-02-05
03-04-03
1 mm
SOT883
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