BSS84AKM NXP Semiconductors, BSS84AKM Datasheet - Page 10
![P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415244/sot883_3d_sml.gif)
BSS84AKM
Manufacturer Part Number
BSS84AKM
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSS84AKM.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NXP Semiconductors
8. Test information
BSS84AKM
Product data sheet
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
All information provided in this document is subject to legal disclaimers.
P
Rev. 1 — 23 May 2011
t
1
t
2
duty cycle δ =
006aaa812
t
t
t
1
2
50 V, 230 mA P-channel Trench MOSFET
BSS84AKM
© NXP B.V. 2011. All rights reserved.
10 of 16