BSP220 NXP Semiconductors, BSP220 Datasheet - Page 6

• Manufacturer Part Number: BSP220
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
April 1995
handbook, halfpage
handbook, halfpage
P-channel enhancement mode vertical
D-MOS transistor
Fig.6
Fig.8
(pF)
(A)
160
120
I D
0.8
0.6
0.4
0.2
C
80
40
0
1
0
0
0
Typical transfer characteristic; V
T
Typical capacitances as a function of
drain-source voltage; V
T
j
j
= 25 C.
= 25 C.
2
5
10
4
15
6
GS
= 0; f = 1 MHz;
20
8
V DS (V)
V GS (V)
C iss
C rss
C oss
MDA734
MDA707
DS
= 10 V;
25
10
6
handbook, halfpage
handbook, halfpage
Fig.7
Fig.9
(mA)
I D
10
10
2.5
1.5
0.5
10
k
2
1
0
3
2
50
8
Typical on-resistance as a function of drain
current; T
Temperature coefficient of drain-source
on-resistance;
typical R
k
=
12
---------------------------------------------- ;
R
V GS = 10 V
0
DS on
R
j
DS(on)
DS on
= 25 C.
16
5 V
4 V
at 25 C
at 200 mA/ 10 V.
50
at T
20
j
Product specification
100
24
R DSon ( )
T j ( C)
BSP220
MDA710
MDA708
150
28