BSP220 NXP Semiconductors, BSP220 Datasheet - Page 4

• Manufacturer Part Number: BSP220
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
April 1995
R
C
C
C
Switching times (see Figs 2 and 3)
t
t
j
on
off
V
I
I
V
SYMBOL
Y
= 25 C unless otherwise specified.
DS(on)
iss
oss
rss
P-channel enhancement mode vertical
D-MOS transistor
DSS
GSS
(BR)DSS
GS(th)
fs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
transfer admittance
input capacitance
output capacitance
feedback capacitance
turn-on time
turn-off time
PARAMETER
4
V
V
V
V
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
I
V
V
I
I
V
I
V
V
V
V
I
V
V
I
V
V
GS
GS
DS
GS
GS
GS
GS
D
D
D
D
D
D
DS
GS
GS
DS
DS
DS
DS
DD
GS
DD
GS
CONDITIONS
= 10 A
= 1 mA
= 200 mA
= 200 mA
= 250 mA
= 250 mA
= 0
= 0
= 0
= V
= 0
= 0
= 0
= 160 V
= 20 V
= 10 V
= 25 V
= 25 V
= 25 V
= 25 V
= 50 V
= 0 to 10 V
= 50 V
= 0 to 10 V
DS
200
0.8
100
MIN. TYP.
10
200
65
20
6
5
20
Product specification
BSP220
1
100
2.8
12
90
30
15
20
30
MAX. UNIT
V
V
mS
pF
pF
pF
nA
ns
ns
A