BSH111 NXP Semiconductors, BSH111 Datasheet - Page 2

• Manufacturer Part Number: BSH111
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 09629
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
DS
tot
j
DS
DGR
GS
tot
stg
j
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
Quick reference data
Limiting values
Conditions
25 C
T
T
V
V
V
Conditions
25 C
25 C
T
Figure 2
T
T
Figure 3
T
T
T
Rev. 02 — 26 April 2002
sp
sp
GS
GS
GS
sp
sp
sp
sp
sp
sp
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
T
T
T
and
j
j
j
N-channel enhancement mode field-effect transistor
150 C
150 C
150 C; R
Figure 1
3
D
D
D
GS
GS
= 500 mA
= 75 mA
= 75 mA
GS
= 4.5 V
= 4.5 V;
= 4.5 V;
p
p
GS
10 s;
10 s
= 20 k
Figure 2
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
-
-
-
-
2.3
2.4
3.1
Min
-
-
-
-
-
-
-
-
-
65
65
Max
55
335
0.83
150
4.0
5.0
8.0
Max
55
55
335
212
1.3
0.83
+150
+150
335
1.3
BSH111
10
Unit
V
mA
W
Unit
V
V
V
mA
mA
A
W
mA
A
C
C
C
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