BSH111 NXP Semiconductors, BSH111 Datasheet - Page 10

• Manufacturer Part Number: BSH111
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9. Package outline
Fig 15. SOT23.
9397 750 09629
Product data
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
Rev. 02 — 26 April 2002
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
N-channel enhancement mode field-effect transistor
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
0.1
EUROPEAN
w
L p
A
Q
c
X
BSH111
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
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