2N7002PV NXP Semiconductors, 2N7002PV Datasheet - Page 7

• Manufacturer Part Number: 2N7002PV
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2N7002PV
Product data sheet
Fig 6.
Fig 8.
R
DSon
(Ω)
(A)
I
(1) V
(2) V
(3) V
(4) V
(5) V
10.0
D
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
7.5
5.0
2.5
0.0
0.0
0.0
T
current as a function of drain-source voltage;
typical values
T
Per transistor: Drain-source on-state
resistance as a function of drain current;
typical values
Per transistor: Output characteristics: drain
V
amb
amb
GS
GS
GS
GS
GS
GS
= 3.25 V
= 3.5 V
= 4 V
= 5 V
= 10 V
= 4.0 V
= 25 °C
= 25 °C
0.2
1.0
0.4
2.0
(1)
0.6
(2)
3.25 V
2.75 V
3.5 V
3.0 V
2.5 V
3.0
(3)
(5)
0.8
All information provided in this document is subject to legal disclaimers.
V
017aaa017
017aaa019
DS
I
D
(V)
(A)
(4)
4.0
1.0
Rev. 1 — 5 August 2010
Fig 7.
Fig 9.
R
DSon
(Ω)
(A)
I
10
10
10
10
(1) minimum values
(2) typical values
(3) maximum values
(1) T
(2) T
D
6.0
4.0
2.0
0.0
−3
−4
−5
−6
0.0
0
T
Per transistor: Sub-threshold drain current as
a function of gate-source voltage
I
Per transistor: Drain-source on-state
resistance as a function of gate-source
voltage; typical values
D
amb
amb
amb
= 500 mA
60 V, 350 mA N-channel Trench MOSFET
= 25 °C; V
= 150 °C
= 25 °C
2.0
1
DS
(1)
4.0
= 5 V
(2)
6.0
(1)
(2)
2
2N7002PV
V
© NXP B.V. 2010. All rights reserved.
8.0
(3)
GS
017aaa018
017aaa020
V
(V)
GS
(V)
10.0
3
7 of 16