2N7002BKW NXP Semiconductors, 2N7002BKW Datasheet - Page 8

• Manufacturer Part Number: 2N7002BKW
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2N7002BKW
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
(1) T
(2) T
(1) maximum values
(2) typical values
(3) minimum values
D
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.0
1.0
0.0
−60
0.0
V
function of gate-source voltage; typical values
I
ambient temperature
D
amb
amb
DS
= 0.25 mA; V
> I
= 25 °C
= 150 °C
D
1.0
× R
0
DSon
DS
2.0
= V
(1)
(2)
(3)
60
GS
3.0
(1)
120
(2)
4.0
T
All information provided in this document is subject to legal disclaimers.
amb
017aaa043
017aaa045
V
GS
(°C)
(V)
180
5.0
Rev. 1 — 17 June 2010
Fig 11. Normalized drain-source on-state resistance
Fig 13. Input, output and reverse transfer
(pF)
C
(1) C
(2) C
(3) C
a
10
2.4
1.8
1.2
0.6
0.0
10
1
2
10
−60
as a function of ambient temperature; typical
values
f = 1 MHz; V
capacitances as a function of drain-source
voltage; typical values
a
−1
iss
oss
rss
=
60 V, 310 mA N-channel Trench MOSFET
-----------------------------
R
DSon 25°C
R
DSon
0
(
GS
1
= 0 V
(1)
(2)
(3)
)
60
2N7002BKW
10
120
V
© NXP B.V. 2010. All rights reserved.
T
DS
amb
017aaa044
017aaa046
(V)
(°C)
180
10
2
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