BUK9Y40-55B NXP Semiconductors, BUK9Y40-55B Datasheet - Page 7

• Manufacturer Part Number: BUK9Y40-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9Y40-55B_3
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
20
15
10
90
60
30
5
0
0
V
T
function of gate-source voltage; typical values
of drain current; typical values
0
0
DS
j
= 25 °C
= 25V
3.0 3.2 3.4 3.6 3.8
1
20
T
j
= 175 °C
2
V
40
GS
T
j
= 25 °C
3
(V) = 10
5.0
I
D
V
GS
(A)
03np08
03np11
(V)
Rev. 03 — 22 February 2008
60
4
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
2.0
1.5
1.0
0.5
2.4
1.6
0.8
0
0
−60
I
junction temperature
−60
a =
factor as a function of junction temperature
D
= 1 m A;V
R
DSon ( 25°C )
R
N-channel TrenchMOS logic level FET
DSon
DS
0
0
= V
GS
BUK9Y40-55B
60
60
max
min
typ
120
120
© NXP B.V. 2008. All rights reserved.
T
T
j
j
(°C)
(°C)
03ng52
03nb25
180
180
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