BUK9Y40-55B NXP Semiconductors, BUK9Y40-55B Datasheet - Page 4

• Manufacturer Part Number: BUK9Y40-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9Y40-55B_3
Product data sheet
Symbol
R
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
10
10
(A)
10
10
I
-1
-1
-2
D
3
2
1
1
T
10
mb
1
-6
0.2
0.1
0.05
δ = 0.5
Thermal characteristics
0.02
single shot
= 25 °C; I
Parameter
thermal resistance
from junction to
mounting base
DM
Limit R
is single pulse
10
DSon
-5
= V
DS
/ I
D
Conditions
see
Figure 5
10
-4
Rev. 03 — 22 February 2008
10
10
-3
10
Min
-
N-channel TrenchMOS logic level FET
-2
V
DS
(V)
BUK9Y40-55B
DC
Typ
-
10
P
-1
t
p
10 ms
T
t
1 ms
100 μs
100 ms
p
t
p
Max
2.5
© NXP B.V. 2008. All rights reserved.
= 10 μs
(s)
δ =
03nn94
03nn95
T
t
p
t
10
1
2
Unit
K/W
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