BUK9E06-55A NXP Semiconductors, BUK9E06-55A Datasheet - Page 6

• Manufacturer Part Number: BUK9E06-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK9E06-55A
Product data sheet
Symbol
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
D
S
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
…continued
Conditions
V
see
V
V
V
see
V
T
V
R
from drain lead 6 mm from package to
centre of die ; T
from upper edge of drain mounting base
to centre of die ; T
from source lead to source bond pad ;
T
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
j
j
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C
= 30 A; V
= 20 A; dI
Figure
Figure
Figure 15
= 30 V; R
= 5 V; I
= 10 V; I
= 4.5 V; I
= 5 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 04 — 31 May 2010
12; see
12; see
D
D
GS
S
DS
D
/dt = -100 A/µs;
= 25 A; T
D
= 25 A; T
L
DS
= 25 A; T
= 0 V; T
= 25 A; T
Figure 14
= 1.2 Ω; V
= 25 V; f = 1 MHz;
j
j
= 25 °C
= 25 °C
= 30 V; T
j
= 25 °C
Figure 13
Figure 13
j
j
j
= 25 °C;
= 175 °C;
= 25 °C;
j
j
= 25 °C
= 25 °C
GS
j
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9E06-55A
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
4.8
-
5.3
6500
1000
650
45
180
420
235
4.5
2.5
7.5
0.85
80
200
© NXP B.V. 2010. All rights reserved.
1200
-
Max
13.2
5.8
6.7
6.3
8600
850
-
-
-
-
-
-
1.2
-
-
Unit
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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