BUK9E06-55A NXP Semiconductors, BUK9E06-55A Datasheet - Page 2

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9E06-55A

Manufacturer Part Number
BUK9E06-55A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9E06-55A
Manufacturer:
NXP
Quantity:
12 000
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9E06-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9E06-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
[1]
Package
Name
I2PAK
Continuous current is limited by package.
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 31 May 2010
Simplified outline
SOT226 (I2PAK)
1
mb
2
3
N-channel TrenchMOS logic level FET
Graphic symbol
BUK9E06-55A
mbb076
G
© NXP B.V. 2010. All rights reserved.
D
S
SOT226
Version
2 of 14

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