BUK9832-55A NXP Semiconductors, BUK9832-55A Datasheet - Page 7

• Manufacturer Part Number: BUK9832-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9832-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
(V)
D
20
15
10
2.5
1.5
0.5
5
0
2
1
0
0.0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0.5
0
1.0
1.5
T
j
= 150 °C
60
max
typ
min
2.0
2.5
120
T
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
03aa33
T
3.0
j
V
( ° C)
03nc39
GS
(V)
180
3.5
Rev. 02 — 1 June 2010
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
DSon
V
(V)
GS
80
70
60
50
40
30
20
10
5
4
3
2
1
0
0
gate charge; typical values
of drain current; typical values
0
0
V
GS
(V) = 3 3.2 3.4
N-channel TrenchMOS logic level FET
20
10
V
DD
BUK9832-55A
40
= 14 V
3.6
3.8
20
4
V
60
Q
DD
© NXP B.V. 2010. All rights reserved.
G
= 44 V
(nC)
I
D
03nc37
03nc42
(A)
5
30
80
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