BUK9832-55A NXP Semiconductors, BUK9832-55A Datasheet - Page 4

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9832-55A

Manufacturer Part Number
BUK9832-55A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9832-55A
Manufacturer:
NXP
Quantity:
30 000
Part Number:
BUK9832-55A
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9832-55A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-sp)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to solder point as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
Z
(K/W)
th(j-sp)
(A)
I
10
10
10
10
D
10
10
10
10
10
−1
−2
−1
−2
1
1
3
2
2
10
10
−1
−6
P
δ = 0.5
0.2
0.1
0.05
0.02
t
p
10
T
−5
Single Shot
δ =
T
t
Conditions
see
t
p
10
All information provided in this document is subject to legal disclaimers.
−4
R
Figure 4
DSon
1
= V
10
Rev. 02 — 1 June 2010
−3
DS
/I
D
10
−2
D.C.
10
−1
10
N-channel TrenchMOS logic level FET
1
P
V
DS
t
p
(V)
T
10
BUK9832-55A
Min
-
-
δ =
t
p
t
100 μs
1 ms
10 ms
100 ms
03nc44
03nc45
(s)
p
= 10 μs
t
T
t
p
10
1
2
2
Typ
-
70
© NXP B.V. 2010. All rights reserved.
Max
15
-
Unit
K/W
K/W
4 of 13

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