BUK9623-75A NXP Semiconductors, BUK9623-75A Datasheet - Page 8

• Manufacturer Part Number: BUK9623-75A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9623-75A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
2.4
1.6
0.8
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
60
50
40
30
20
10
120
0
0.0
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03nb25
0.2
Rev. 02 — 16 February 2011
180
T
j
= 175 °C
0.4
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
0.8
6000
5000
4000
3000
2000
1000
0
10
T
as a function of drain-source voltage; typical
values
j
= 25 °C
−2
C
C
C
1.0
iss
oss
rss
V
SD
03nb11
N-channel TrenchMOS logic level FET
(V)
1.2
10
−1
BUK9623-75A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nb18
(V)
10
2
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