BUK9623-75A NXP Semiconductors, BUK9623-75A Datasheet - Page 7

• Manufacturer Part Number: BUK9623-75A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9623-75A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
(V)
D
2.5
1.5
0.5
45
40
35
30
25
20
15
10
5
0
2
1
0
−60
0.0
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0.5
−20
1.0
20
T j = 175 °C
max
min
typ
1.5
60
100
2.0
T
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
140
2.5
T
V
j
03nb14
03na17
(°C)
GS
(V)
Rev. 02 — 16 February 2011
180
3.0
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
V
(mΩ)
(V)
DSon
GS
4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
0
60
55
50
45
40
35
30
25
20
15
10
gate charge; typical values
10
of drain current; typical values
0
30
V
N-channel TrenchMOS logic level FET
V
DS
10
GS
50
= 14(V)
= 3 (V)
70
20
3.2
BUK9623-75A
3.4
90
3.6
30
110
3.8
V
DS
4
130
= 60(V)
© NXP B.V. 2011. All rights reserved.
40
Q
150
G
03nb12
03nb17
(nC)
I
D
(A)
5
170
50
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